| PART |
Description |
Maker |
| CMPD7006S CMPD7006 CMPD7006A CMPD7006C |
SMD Switching Diode Dual: Common Anode
SMD Switching Diode Dual: In Series
SMD Switching Diode Single: High Voltage
SMD Switching Diode Dual: Common Cathode
SURFACE MOUNT VERY HIGH VOLTAGE SILICO SWITCHING DIODE
|
CENTRAL[Central Semiconductor Corp]
|
| BAS21M3T5G |
SOT-723 SS Switching Diode SIGNAL DIODE
High Voltage Switching Diode
|
ON Semiconductor
|
| 150KR60 150KSR10 150KSR40 150KSR30 150KR20 150KR30 |
Diode Switching 600V 150A 2-Pin DO-8
Diode Switching 100V 150A 2-Pin Case B-42
Diode Switching 400V 150A 2-Pin Case B-42
Diode Switching 300V 150A 2-Pin Case B-42
Diode Switching 200V 150A 2-Pin DO-8
Diode Switching 300V 150A 2-Pin DO-8
|
New Jersey Semiconductor
|
| 1N4148 |
SMALL SIGNAL SWITCHING DIODE
Fast Switching Diode
|
Chenyi Electronics
Comchip Technology
|
| CPD4110 |
Switching Diode High Current Switching Diode Chip
|
Central Semiconductor Corp
|
| CPD91V |
Switching Diode Low Leakage Switching Diode Chip
|
Central Semiconductor Corp
|
| CPD83V10 |
Switching Diode High Speed Switching Diode Chip
|
Central Semiconductor Corp
|
| CMPD7000E |
SMD Switching Diode Dual: In Series
ENHANCED SPECIFICATION SURFACE MOUNT DUAL, SILICON SWITCHING DIODE SERIES CONNECTION
|
Central Semiconductor Corp
|
| SMBD2835 SMBD2836 Q68000-A8436 Q68000-A8547 |
Silicon Switching Diode Array 0.25 A, 2 ELEMENT, SILICON, SIGNAL DIODE
From old datasheet system
Silicon Switching Diode Array with co...
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Infineon
|
| Q67040S4717 IKW30N60T |
600V & 1200V IGBT for frequencies up to 10kHz for hard switching and up to 30kHz for soft switching with antiparallel diode. ...
Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode 低损耗DuoPack：在IGBT的沟槽场终止技术和软，恢复快反平行何快恢复二极
From old datasheet system
|
INFINEON[Infineon Technologies AG]
|
| 1N4150-1 JANTXV1N4150-1 |
Signal or Computer Diode; Package: DO-35; IO (A): 0.2; Cj (pF): 2.5; Vrwm (V): 50; trr (nsec): 4; VF (V): 0.74; IR (µA): 0.1; 0.2 A, 50 V, SILICON, SIGNAL DIODE, DO-35
SWITCHING DIODE
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
